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SJ MOSFET for PV Micro-inverter & Industrial /Server Power Supplies

SJ MOSFET for PV Micro-inverter & Industrial /Server Power Supplies Back

PDF

Introduction TO-247 and TOLL encapsulated N600V/650V SJ MOSFETs are manufactured by deep trench technology and multi-layer epitaxy technology, with lower on-state resistance Rds and gate charge Qg, significantly reducing turn-on and turn-off losses. The products can support higher frequency and dynamic response, which is suitable for applications of high power density and high efficiency power electronic conversion systems.

Features 1. Deep trench and multi-layer epitaxy technology is applied, lower internal resistance and excellent switching property;
2. TOLL, TO-247 encapsulation, suitable for high-power applications;
3. Strong UIS capability, better Qg and Rds parameters, which can support higher frequency and dynamic response.

SPECIFICATION

YJN48C60HJ YJT33C60HJ

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