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Discrete Chips Integrated circuit

Automotive

Small Signal Switching Diode
Small Signal Schottky Diode
Small Signal Zener Diode
Small Signal Transisitor
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Fast Recovery Rectifier Diode
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Transient Voltage Suppressor
ESD Protection Diode
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Small signal digital transistor
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SiC Automotive
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Rectifier

Bridge Rectifier
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PV Diode
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Automotive Rectifier
Rectifier Diode Fast Recovery Rectifier Diode Schottky Diode

Protection Diode

Transient Voltage Suppressor
Thyristor Surge Suppressor
ESD Protection Diode
Zener Diode

Thyristor
Uni-directional Thyristor Bi-directional Thyristor

Automotive Protection Diode
Transient Voltage Suppressor ESD Protection Diode Power Zener Diode

Small Signal

Small Signal Switching Diode
Small Signal Schottky Diode
Small Signal Zener Diode
Small Signal Transisitor
Small Signal Digital Transisitor
Power Transistor

Automotive Small Signal
Small Signal Switching Diode Small Signal Schottky Diode Small Signal Zener Diode Small Signal Transisitor Power Transistor Small Signal Digital Transisitor

MOSFET

ALL MOSFET
Automotive MOSFET

High-voltage MOSFET(500V-1000V)
SJ MOSFET SiC MOSFET Planner MOSFET

Low & Medium Voltage MOSFET(12V-400V)
N-Channel MOSFET P-Channel MOSFET

NP MOSFET(12V-300V)
Complementary MOSFET Dual N-Channel MOSFET Dual P-Channel MOSFET Half-bridge MOSFET

IGBT

IGBT Module
IGBT Discrete
IGBT Automotive

Module

Rectifier Diodes Module
Fast Recovery Module
Schottky Module
Thyristor Module
Thyristor / Rectifier Diode Module
Fast/Phase-controlled Thyristor

SiC

SiC Schottky Diode
SiC MOSFET
SiC Schottky Diode Modules
SiC MOSFET Modules
SiC Automotive Schottky Diode
SiC Automotive MOSFET

4/5″wafer

STD Chip
FRD Chip
EPI Chip
TVS Chip
HVB High Voltage Module Chip
Automotive Electronics Chip

6″wafer

TSBD Chip
PSBD Chip
FRED Chip
LBD Chip
PMBD Chip
ESD Chip

Integrated circuit

LOAD Switches
LDO
Shunt Regulator
DC-DC

Product Cross

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TO-220AC Internal Insulated Package Series Ultra-Fast Recovery Diode

TO-220AC Internal Insulated Package Series Ultra-Fast Recovery Diode Back

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Introduction 1.Composed of two 300V ultrafast recovery diodes in series;
2.Internal insulation structure, the two chips have the same heat dissipation performance;
3.Suitable for continuous mode power factor correction and hard switching conditions of the booster diode;
4.The insulating ceramic sheet is placed in the product, and the heat sink is directly affixed, which saves the process of affixing the insulation gasket for the customer.

Features 1.Using flat FRED chip, Tj capacity can reach 175℃, which meets customers' high temperature application scenarios;
2.The reverse performance is excellent: the reverse charge QRR is small and the reverse power consumption is low, which meets the high frequency CCM working mode
3.With good VF and QRR compromise performance, can compete with SiC devices, so that you can choose a smaller heat sink.

SPECIFICATION

MURIS860UC

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